AON4807 30v dual p-channel mosfet v ds i d (at v gs =-10v) -4a r ds(on) (at v gs =-10v) < 68m w r ds(on) (at v gs =-4.5v) < 105m w symbol v ds the AON4807 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for load switch and battery protection applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted -30v drain-source voltage -30 g2 s2 g1 s1 d2 d2 d1 d1 1 2 3 4 8 7 6 5 top view g1 d1 s1 g2 d2 s2 v gs i dm t j , t stg symbol t 10s steady-state steady-state r q jl c thermal characteristics units parameter typ max junction and storage temperature range -55 to 150 v 20 gate-source voltage t a =25c w 1.9 1.2 t a =70c t a =70c a i d -4 -3 -18 pulsed drain current c continuous drain current maximum junction-to-ambient a d 37 100 50 power dissipation b p d maximum junction-to-ambient a maximum junction-to-lead t a =25c c/w c/w c/w r q ja 51.5 82 65 general description product summary www.freescale.net.cn 1/5
symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.3 -1.8 -2.3 v i d(on) -18 a 54 68 t j =125c 76 95 80 105 m w g fs 8 s v sd -0.78 -1 v i s -2.5 a c iss 290 pf c oss 60 pf c rss 40 pf r g 16 w q g (10v) 5.8 10 nc q g (4.5v) 2.8 6 nc q gs 1.1 nc q gd 1.3 nc t d(on) 6 ns t 5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =-10v, v =-15v, m w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =-10v, v ds =-15v, i d =-4a gate source charge gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =-15v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i s =-1a,v gs =0v v ds =-5v, i d =-4a v gs =-4.5v, i d =-3a diode forward voltage r ds(on) static drain-source on-resistance i dss m a zero gate voltage drain current v gs =-10v, i d =-4a forward transconductance drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v ds =v gs i d =-250 m a v ds =0v, v gs =20v gate-body leakage current t r 5 ns t d(off) 21 ns t f 9 ns t rr 10 ns q rr 20 nc body diode reverse recovery charge i f =-4a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =3.75 w , r gen =3 w body diode reverse recovery time i f =-4a, di/dt=100a/ m s turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. AON4807 www.freescale.net.cn 2/5
typical electrical and thermal characteristics 17 5 2 10 0 18 0 2 4 6 8 10 0 1 2 3 4 5 -i d (a) -v gs (volts) figure 2: transfer characteristics (note e) 40 50 60 70 80 90 100 110 0 2 4 6 8 r ds(on) (m w w w w ) -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =-4.5v i d =-3a v gs =-10v i d =-4a 25 c 125 c v ds =-5v v gs =-4.5v v gs =-10v 0 5 10 15 20 0 1 2 3 4 5 -i d (a) -v ds (volts) fig 1: on-region characteristics (note e) v gs =-3v -3.5v -6v -10v -4.5v -4v 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 60 100 140 180 220 2 4 6 8 10 r ds(on) (m w w w w ) -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =-4a 25 c 125 c AON4807 www.freescale.net.cn 3/5
typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 6 -v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 capacitance (pf) -v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =-15v i d =-4a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =100 c/w AON4807 www.freescale.net.cn 4/5
vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd id vgs vds unclamped inductive switching (uis) test circuit & waveforms vds l - 2 e = 1/2 li ar ar bv dss vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) vdd vgs vgs rg dut vdc vgs id vgs - + i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i AON4807 www.freescale.net.cn 5/5
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